TECHNIWAVE designs and manufactures High Power amplifiers based on GaN technologies up to Q-band for Defense and Commercial SATCOM applications.

GaN based Solid State Power Amplifiers have extremely attractive properties (e.g.  high efficiency, high linearity wide bandwidth and breakdown voltage) that satellite communication systems. In some years the successfully deployment of new GaN generation of SSPAs will allow a real technological breakthrough in radiofrequency communications.

A wide range compact and connectorized SSPA’s covering SATCOM communications millimeter frequency bands can be designed on your specifications.

·       High power density

·       High efficiency

·       High thermal dissipation

·       Easy power matching and combining

§  Ka-band Power Amplifier

·       Operating Frequency: 27.5 – 31.5 GHz

·       Output Power: 8 W

·       No ITAR restriction

   Output saturated power > 40 dBm

   Gain  > 46 dB

   Gain flatness over the whole bandwidth : ± 1dB

   Output power P1dB > 39 dBm

   Third order intermodulation <-26 dBc 2 tones Δf=5 Mhz for Pout=P1dB-3 dB

   Spurious < -58 dBc at POUT=P1dB

   Harmonics ≤ -30 dBc

   Environmentally sealed & EMI shielded (hermetic sealing in option)

§  Q-band Power Amplifier

·       Operating Frequency: 38 – 46 GHz

·       Point to multi-point or SATCOM applications

·       Output Power: 2 W

·       No ITAR restriction

   Output saturated power > 33 dBm

   Gain  > 40 dB

   Gain flatness over the whole bandwidth : ± 1.5dB

   Output power P1dB > 31 dBm

   Third order intermodulation <-24 dBc 2 tones Δf=5 Mhz for Pout=P1dB-3 dB

   Spurious < -55 dBc at POUT=P1dB

   Harmonics ≤ -30 dBc

   Environmentally sealed & EMI shielded (hermetic sealing in option)